N
O
T RE
CO
MMENDED F
O
R NEW DE
S
I
G
N
NOT RECOMMENDED FOR NEW DESIGN
6
RF Device Data
Freescale Semiconductor
MRF9045NR1
TYPICAL CHARACTERISTICS
0
5
10
15
20
25
30
35
40
45
50
55
60
65
70
22 24 26 28 30 32
VDD, DRAIN VOLTAGE (VOLTS)
Figure 10. Output Voltage versus Supply Voltage
P
out
, OUTPUT POWER (WATTS) PEP
Pin
= 0.3 W
Pin
= 0.6 W
Pin
= 1 W
IDQ
= 350 mA
f = 945 MHz
Two?Tone Measurement
100 kHz Tone Spacing
Figure 11. MTTF Factor versus Junction Temperature
100 120 140 160 180 200
210
1011
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2
for MTTF in a particular application.
1010
108
MTTF FACTOR (HOURS X AMPS
2
)
90 110 130 150 170 190
109
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相关代理商/技术参数
MRF9045NR1 功能描述:射频MOSFET电源晶体管 45W 1GHZ RF LDMOS TO270N RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF9045NR1-CUT TAPE 制造商:Freescale 功能描述:MRF9045 Series 945 MHz 45 W 28 V Lateral N-Channel RF Power MOSFET
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MRF904SNR1 制造商:Freescale Semiconductor 功能描述:
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MRF9060 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:945 MHz, 60 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
MRF9060LR1 功能描述:射频MOSFET电源晶体管 60W 1GHZ RFPWR FET NI360 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF9060LR1_08 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET